Murata high-density silicon capacitors have been developed with a semiconductor MOS process and are using 3D structures to substantially increase the electrode surfaces, and therefore increase the capacitance for a given footprint.
Murata silicon technology is based on a monolithic structure embedded in a noncrystalline substrate (single MIM and multi-MIM – Metal Insulator Metal).
Murata’s UESL Silicon capacitors are the best in class for in-package decoupling and PDN design improvement by removing anti-resonance peaks at high frequency Murata’s UESL Silicon capacitors are successfully adopted in flagship Mobile APU and part of reference PDN design for HPC.
